Methods of improving drive currents by employing strain inducing STI liners
US7396728B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2005 |
| Grant date | Jul 8, 2008 |
| Priority date | — |
| Expiry date | Jul 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0188
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method forms a semiconductor device comprising isolation structures that selectively induce strain into active regions of NMOS and PMOS devices. Form a hard mask layer over a semiconductor body. A resist layer is formed on the hard mask layer that exposes and defines isolation regions. The hard mask layer is patterned and trench regions are formed using the hard mask layer as a mask. An oxide trench liner that induces compressive strain into active regions of the PMOS region is formed within trench regions of the PMOS region. A nitride trench liner that induces tensile strain into active regions of the NMOS region is formed within the NMOS trench regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.