Electrostatic discharge protection device for radio frequency applications based on an isolated L-NPN device
US7397088B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2006 |
| Grant date | Jul 8, 2008 |
| Priority date | — |
| Expiry date | Sep 25, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/711
Abstract
A lateral bipolar transistor is used to protect a passive radio frequency (RF) microelectronic circuit during electrostatic discharge (ESD) events. The microelectronic circuit receives a high frequency differential input signal across first and second pads. The lateral bipolar transistor includes an n-type emitter coupled to the first pad and an n-type collector coupled to the second pad. The emitter and collector are located in a p-well, which forms the base of the transistor. The p-well is located in an isolating n-well, which in turn, is located in a p-type substrate. The n-well is coupled to receive the VDD supply voltage and the p-substrate is coupled to a VSS reference voltage. A dielectric region can be located between the emitter and collector (in the p-well).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.