Junction barrier schottky with low forward drop and improved reverse block voltage
US7397102B2 · kind B2 · utility
4Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 20, 2005 |
| Grant date | Jul 8, 2008 |
| Priority date | — |
| Expiry date | Apr 27, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/111
Abstract
This invention discloses a junction barrier Schottky device supported on a substrate that has a first conductivity type. The Schottky device includes a first diffusion region of a first conductivity type for functioning as a forward barrier height reduction region. The Schottky device further includes a second diffusion region of a second conductivity type disposed immediately adjacent to the first diffusion region for functioning as a backward blocking enhancement region to reduce the backward leakage current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.