Brian Pratt
11Patents
5h-index
7Co-inventors
55Inventor score
Filing activity: Nov 20, 2001 → Feb 7, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7052982B2 | Method for manufacturing a superjunction device with wide mesas | Electricity | 41 | Expired |
| US7354818B2 | Process for high voltage superjunction termination | Electricity | 12 | Expired |
| US6645815B2 | Method for forming trench MOSFET device with low parasitic resistance | Emerging Cross-Sectional Technologies | 9 | Expired |
| US7759204B2 | Process for high voltage superjunction termination | Electricity | 9 | Active |
| US6977203B2 | Method of forming narrow trenches in semiconductor substrates | Electricity | 5 | Expired |
| US7897462B2 | Method of manufacturing semiconductor component with gate and shield electrodes in trenches | Electricity | 4 | Active |
| US7397102B2 | Junction barrier schottky with low forward drop and improved reverse block voltage | Electricity | 4 | Expired |
| US7364994B2 | Method for manufacturing a superjunction device with wide mesas | Electricity | 4 | Active |
| US8685822B2 | Semiconductor component and method of manufacture | Electricity | 1 | Active |
| US8552535B2 | Trench shielding structure for semiconductor device and method | Electricity | 0 | Active |
| US7772086B2 | Process for high voltage superjunction termination | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.