Bipolar transistor

US7397108B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventor

• Torkel Arnborg · Stockholm, SE

Key dates

• Filing date: Mar 11, 2005
• Grant date: Jul 8, 2008
• Expiry date: May 19, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/311

Abstract

A monolithically integrated bipolar transistor has an SOI substrate, a collector region in the SOI substrate, a base layer region on top of and in contact with the collector region, and an emitter layer region on top of and in contact with the base layer region, wherein the collector, base layer, and emitter layer regions are provided with separate contact regions. Further, a region of an insulating material, preferably an oxide or nitride, is provided in the base layer region, in the emitter layer region, or between the base and emitter layer regions, wherein the insulating region extends laterally at a fraction of a width of the base and emitter layer regions to reduce an effective width of the bipolar transistor to thereby eliminate any base push out effects that would otherwise occur.