Impurity measuring method for Ge substrates
US7399635B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 10, 2004 |
| Grant date | Jul 15, 2008 |
| Priority date | — |
| Expiry date | Jul 27, 2026 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T436/255
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present invention provides an impurity measuring method comprising the steps of dropping a drop of a first solution on the surface of a substrate to be measured, moving the drop dropped on the surface of the substrate so that the drop is kept in contact with the surface and collects an impurity absorbed on the surface, recovering the drop after the movement and analyzing the recovered drop by chemical analysis to determine the type and concentration of the impurity, characterized in that the first solution is phobic to the substrate and the substrate consists substantially of Ge. The method is of particular importance for measuring metallic contamination on the surface of Ge substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.