Patent · US Active

Method for fabricating optical sensitive layer of solar cell having silicon quantum dots

US7399654B2 · kind B2 · utility

3Cited by

1References

12Claims

0Family size

Assignee

ATOMIC ENERGY COUNCIL—INSTITUTE OF NUCLEAR ENERGY RESEARCH · TW

Inventors

Ming-Chang Lin · Xihu, TW
Tsun-Neng Yang · Taipei, TW
Shan-Ming Lan · Daxi District, TW
Tsong-Yang Wei · Taipei, TW
Jyh-Perng Chiu · Dongshan, TW
Wei-Yang Ma · Daxi District, TW

Key dates

Filing date	Mar 6, 2006
Grant date	Jul 15, 2008
Priority date	—
Expiry date	Jan 10, 2027

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/542
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

A distribution layer of silicon quantum dots are fabricated. After the layer is exposed to sun light for a while, the layer absorbs energy and produces pairs of electron and hole. By limiting the movement of the electrons and their moving directions through the structure obtained, the efficiency of an optoelectronic conversion is enhanced.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.