Nitride-based semiconductor device
US7400000B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2005 |
| Grant date | Jul 15, 2008 |
| Priority date | — |
| Expiry date | Jul 12, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-emitting diode is built on a silicon substrate doped with a p-type impurity to possess sufficient conductivity to provide a current path. The p-type silicon substrate has epitaxially grown thereon two superposed buffer layers of aluminum nitride and n-type indium gallium nitride. Further grown epitaxially on the buffer layers is the main semiconductor region of the LED which comprises a lower confining layer of n-type gallium nitride, an active layer for generating light, and an upper confining layer of p-type gallium nitride. In the course of the growth of the main semiconductor region there occurs a thermal diffusion of aluminum, gallium and indium from the buffer layers into the p-type silicon substrate, with the consequent creation of an alloy layer of the diffused metals. Representing p-type impurities in the p-type silicon substrate, these metals do not create a pn junction in the substrate which causes a forward voltage drop.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.