Resistance change memory device having a variable resistance element formed of a first and second composite compound for storing a cation
US7400522B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 12, 2007 |
| Grant date | Jul 15, 2008 |
| Priority date | — |
| Expiry date | Jun 12, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/72
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistance change memory device including: a semiconductor substrate; at least one cell array formed above the semiconductor substrate, each memory cell having a stack structure of a variable resistance element and an access element, the access element having such an off-state resistance value in a certain voltage range that is ten times or more as high as that in a select state; and a read/write circuit formed on the semiconductor substrate as underlying the cell array, wherein the variable resistance element comprises a recording layer formed of a first composite compound expressed by AxMyOz (where “A” and “M” are cation elements different from each other; “O” oxygen; and 0.5≦x≦1.5, 0.5≦y≦2.5 and 1.5≦z≦4.5) and a second composite compound containing at least one transition element and a cavity site for housing a cation ion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.