Method of applying cladding material on conductive lines of MRAM devices
US7402529B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 26, 2005 |
| Grant date | Jul 22, 2008 |
| Priority date | — |
| Expiry date | Feb 15, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a cladding region for use in MRAM devices includes the formation of a conductive bit line proximate to a magnetoresistive memory device. The conductive bit line is immersed in a first bath containing dissolved ions of a first conductive material for a time sufficient to displacement plate a first barrier layer on the conductive line. The first barrier layer is then immersed in an electroless plating bath to form a flux concentrating layer on the first barrier layer. The flux concentrating layer is immersed in a second bath containing dissolved ions of a second conductive material for a time sufficient to displacement plate a second barrier layer on the flux concentrating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.