Gallium nitride-based compound semiconductor light-emitting device and electrode for the same
US7402841B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 21, 2004 |
| Grant date | Jul 22, 2008 |
| Priority date | — |
| Expiry date | Sep 21, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/833
Abstract
An object of the present invention is to provide a light-permeable electrode for use in a gallium nitride-based compound semiconductor light-emitting device, the electrode having improved light permeability and contact resistance.The inventive electrode comprises a light-permeable first layer which is in contact with a surface of a p-contact layer in a gallium nitride-based compound semiconductor light-emitting device and which is capable of providing ohmic contact, and a second layer which is in contact with a part of a surface of said p-contact layer, wherein the first layer comprises a metal, or an alloy of two or more metals, selected from a first group consisting of Au, Pt, Pd, Ni, Co, and Rh, and the second layer comprises an oxide of at least one metal selected from a second group consisting of Ni, Ti, Sn, Cr, Co, Zn, Cu, Mg, and In.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.