Hideki Tomozawa
11Patents
5h-index
19Co-inventors
59Inventor score
Filing activity: May 30, 1991 → Dec 19, 2006
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5256454A | Method for suppression of electrification | Emerging Cross-Sectional Technologies | 18 | Expired |
| US8022419B2 | Flip-chip type semiconductor light-emitting device, method for manufacturing flip-chip type semiconductor light-emitting device, printed circuit board for flip-chip type semiconductor light-emitting device, mounting structure for flip-chip type semiconductor light-emitting device, and light-emitting diode lamp | Electricity | 17 | Active |
| US5437893A | Method for suppression of electrification | Emerging Cross-Sectional Technologies | 11 | Expired |
| US5589270A | Processed substrate obtained by a process for effecting suppression of electrification | Emerging Cross-Sectional Technologies | 8 | Expired |
| US7488971B2 | Nitride semiconductor; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereof | Electricity | 6 | Expired |
| US7781777B2 | Pn junction type group III nitride semiconductor light-emitting device | Electricity | 2 | Expired |
| US5783251A | Method for suppressing electrification and for observing or inspecting an article | Chemistry; Metallurgy | 2 | Expired |
| US7436045B2 | Gallium nitride-based semiconductor device | Emerging Cross-Sectional Technologies | 1 | Expired |
| US7855386B2 | N-type group III nitride semiconductor layered structure | Electricity | 1 | Active |
| US7453091B2 | Gallium nitride-based semiconductor device | Emerging Cross-Sectional Technologies | 0 | Expired |
| US7402841B2 | Gallium nitride-based compound semiconductor light-emitting device and electrode for the same | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.