Semiconductor device
US7402903B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 20, 2004 |
| Grant date | Jul 22, 2008 |
| Priority date | — |
| Expiry date | Jan 20, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a semiconductor device including: a semiconductor substrate; a plurality of diffusion layer patterns formed on the semiconductor substrate; an insulation film formed between the plural diffusion layer patterns on the semiconductor substrate; and a through plug formed to be partly surrounded by the insulation film without being in contact with the plural diffusion layer patterns and to pass through the insulation film and the semiconductor substrate. Further disclosed is a semiconductor device including: a semiconductor substrate; a plurality of diffusion layer patterns formed on the semiconductor substrate; an insulation film formed between the plural diffusion layer patterns on the semiconductor substrate; and a through plug formed to be partly surrounded by the diffusion layer pattern without being in contact with the insulation film and to pass through the diffusion layer pattern and the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.