Non-thermal process for forming porous low dielectric constant films
US7404990B2 · kind B2 · utility
19Cited by
25References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2002 |
| Grant date | Jul 29, 2008 |
| Priority date | — |
| Expiry date | Nov 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Low dielectric materials and films comprising same have been identified for improved performance when used as interlevel dielectrics in integrated circuits as well as methods for making same. In certain embodiments of the invention, there is provided a low-temperature process to remove at least a portion of at least one pore-forming phase within a multiphasic film thereby forming a porous film. The pore-forming phase may be removed via exposure to at least one energy source, preferably an ultraviolet light source, in a non-oxidizing atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.