Memory device with quantum dot and method for manufacturing the same
US7405126B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 18, 2007 |
| Grant date | Jul 29, 2008 |
| Priority date | — |
| Expiry date | Jul 18, 2027 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/943
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Provided is a memory device formed using quantum devices and a method for manufacturing the same. A memory device includes a substrate; a source region and a drain region formed in the substrate so as to be separated from each other by a predetermined interval. A memory cell is formed on the surface of the substrate to connect the source region and the drain region, and has a plurality of nano-sized quantum dots filled with material for storing electrons. A control gate is formed on the memory cell and controls the number of electrons stored in the memory cell. It is possible to embody a highly efficient and highly integrated memory device by providing a memory device having nano-sized quantum dots and a method for manufacturing the same.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.