Soo Doo Chae
47Patents
10h-index
82Co-inventors
78Inventor score
Filing activity: Aug 8, 2000 → Feb 10, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7646041B2 | Non-volatile memory devices including vertical channels, methods of operating, and methods of fabricating the same | Physics | 48 | Active |
| US6936884B2 | Nonvolatile silicon/oxide/nitride/silicon/nitride/oxide/silicon memory | Electricity | 38 | Expired |
| US9012974B2 | Vertical memory devices and methods of manufacturing the same | Electricity | 29 | Active |
| US6949793B2 | Memory device with quantum dot and method for manufacturing the same | Emerging Cross-Sectional Technologies | 25 | Expired |
| US7345898B2 | Complementary nonvolatile memory device | Electricity | 17 | Expired |
| US7250653B2 | SONOS memory device having nano-sized trap elements | Electricity | 13 | Expired |
| US6670670B2 | Single electron memory device comprising quantum dots between gate electrode and single electron storage element and method for manufacturing the same | Physics | 12 | Expired |
| US7187030B2 | SONOS memory device | Physics | 11 | Expired |
| US6946346B2 | Method for manufacturing a single electron memory device having quantum dots between gate electrode and single electron storage element | Physics | 11 | Expired |
| US7420256B2 | Nonvolatile semiconductor memory device having a gate stack and method of manufacturing the same | Electricity | 10 | Expired |
| US7105874B2 | Single electron transistor having memory function | Emerging Cross-Sectional Technologies | 8 | Expired |
| US7858464B2 | Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiation | Electricity | 7 | Active |
| US10453749B2 | Method of forming a self-aligned contact using selective SiO2 deposition | Electricity | 7 | Active |
| US9343672B2 | Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices | Electricity | 7 | Active |
| US7767502B2 | Method for manufacturing electronic device using thin film transistor with protective cap over flexible substrate | Electricity | 7 | Active |
| US7259068B2 | Memory device with quantum dot and method for manufacturing the same | Emerging Cross-Sectional Technologies | 5 | Expired |
| US7176488B2 | Thin film transistor with protective cap over flexible substrate, electronic device using the same, and manufacturing method thereof | Electricity | 4 | Expired |
| US7629244B2 | Method of fabricating a single electron transistor having memory function | Emerging Cross-Sectional Technologies | 4 | Active |
| US7405126B2 | Memory device with quantum dot and method for manufacturing the same | Emerging Cross-Sectional Technologies | 4 | Active |
| US10770294B2 | Selective atomic layer deposition (ALD) of protective caps to enhance extreme ultra-violet (EUV) etch resistance | Electricity | 3 | Active |
| US7531870B2 | SONOS memory device having nano-sized trap elements | Electricity | 3 | Active |
| US8139387B2 | Method of erasing a memory device including complementary nonvolatile memory devices | Electricity | 3 | Active |
| US6465362B1 | Method for forming gate of semiconductor device | Electricity | 2 | Expired |
| US11915931B2 | Extreme ultraviolet lithography patterning method | Electricity | 1 | Active |
| US7719871B2 | Methods of operating and manufacturing logic device and semiconductor device including complementary nonvolatile memory device, and reading circuit for the same | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.