Self-calibration in non-contact surface photovoltage measurement of depletion capacitance and dopant concentration
US7405580B2 · kind B2 · utility
2Cited by
6References
20Claims
0Family size
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Key dates
| Filing date | Mar 16, 2006 |
| Grant date | Jul 29, 2008 |
| Priority date | — |
| Expiry date | Feb 16, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2648
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The surface photovoltage dopant concentration measurement of a semiconductor wafer is calibrated by biasing the semiconductor wafer into an avalanche breakdown condition in a surface depletion region; determining a contact potential difference value corresponding to an avalanche breakdown; determining small signal ac-surface photovoltage value corresponding to an avalanche breakdown; and using the values of the contact potential and the surface photovoltage to calculate a calibration constant that relates depletion layer capacitance and an inverse of the surface photovoltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.