Substrate processing method
US7407821B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2004 |
| Grant date | Aug 5, 2008 |
| Priority date | — |
| Expiry date | Apr 3, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/54466
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is provided a substrate processing method and apparatus which can measure and monitor thickness and/or properties of a film formed on a substrate as needed, and quickly correct a deviation in process conditions, and which can therefore stably provide a product of constant quality. A substrate processing method for processing a substrate having a metal and an insulating material exposed on its surface in such a manner that a film thickness of the metal, with an exposed surface of the metal as a reference plane, is selectively or preferentially changed, including measuring a change in the film thickness and/or a film property of the metal during and/or immediately after processing, and monitoring processing and adjusting processing conditions based on results of this measurement.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.