Low resistance contact structure and fabrication thereof
US7407875B2 · kind B2 · utility
13Cited by
23References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2006 |
| Grant date | Aug 5, 2008 |
| Priority date | — |
| Expiry date | Sep 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28556
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide a method of fabricating a contact structure in a layer of dielectric material between a semiconductor device and a back-end-of-line interconnect. The method includes creating at least one contact opening in said layer of dielectric material; forming a first TiN film through a chemical-vapor deposition process, said first TiN film lining said contact opening; and forming a second TiN film through a physical vapor deposition process, said second TiN film lining said first TiN film. A contact structure fabricated according to embodiments of the invention is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.