Surface passivation of GaN devices in epitaxial growth chamber
US7408182B1 · kind B1 · utility
26Cited by
16References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 4, 2006 |
| Grant date | Aug 5, 2008 |
| Priority date | — |
| Expiry date | Aug 31, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to passivation of a gallium nitride (GaN) structure before the GaN structure is removed from an epitaxial growth chamber. The GaN structure includes one or more structural epitaxial layers deposited on a substrate, and the passivation layer deposited on the structural epitaxial layers. In general, the passivation layer is a dielectric material deposited on the GaN structure that serves to passivate surface traps on the surface of the structural epitaxial layers. Preferably, the passivation layer is a dense, thermally deposited silicon nitride passivation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.