Inventor · Mooresville, NC, US

Joseph A. Smart

17Patents
13h-index
14Co-inventors
71Inventor score

Filing activity: Oct 2, 2000 → Aug 8, 2016

Most-cited inventions

PatentTitleAreaCited byStatus
US7250360B2 Single step, high temperature nucleation process for a lattice mismatched substrate Electricity 96 Expired
US7033961B1 Epitaxy/substrate release layer Electricity 88 Expired
US8080833B2 Thick pseudomorphic nitride epitaxial layers Electricity 43 Active
US7052942B1 Surface passivation of GaN devices in epitaxial growth chamber Electricity 40 Expired
US7026665B1 High voltage GaN-based transistor structure Electricity 36 Expired
US7638346B2 Nitride semiconductor heterostructures and related methods Electricity 35 Active
US9437430B2 Thick pseudomorphic nitride epitaxial layers Electricity 30 Active
US8222650B2 Nitride semiconductor heterostructures and related methods Electricity 28 Active
US7408182B1 Surface passivation of GaN devices in epitaxial growth chamber Electricity 26 Active
US7459356B1 High voltage GaN-based transistor structure Electricity 22 Active
US6478871B1 Single step process for epitaxial lateral overgrowth of nitride based materials Electricity 22 Expired
US7968391B1 High voltage GaN-based transistor structure Electricity 21 Active
US8545629B2 Method and apparatus for producing large, single-crystals of aluminum nitride Emerging Cross-Sectional Technologies 20 Active
US8896020B2 Method and apparatus for producing large, single-crystals of aluminum nitride Emerging Cross-Sectional Technologies 13 Active
US9447521B2 Method and apparatus for producing large, single-crystals of aluminum nitride Emerging Cross-Sectional Technologies 2 Active
US10446391B2 Thick pseudomorphic nitride epitaxial layers Electricity 1 Active
US9970127B2 Method and apparatus for producing large, single-crystals of aluminum nitride Emerging Cross-Sectional Technologies 1 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.