Trench insulated gate field effect transistor
US7408223B2 · kind B2 · utility
11Cited by
0References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 26, 2004 |
| Grant date | Aug 5, 2008 |
| Priority date | — |
| Expiry date | Oct 21, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/519
Abstract
The invention relates to a trench MOSFET with drain (8), sub-channel region (10) body (12) and source (14). The sub-channel region is doped to be the same conductivity type as the body (12), but of lower doping density. A field plate electrode (34) is provided adjacent to the sub-channel region (10) 10 and a gate electrode (32) next to the body (12).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.