Patent · US Active

Switching power supply device, semiconductor integrated circuit device and power supply device

US7408388B2 · kind B2 · utility

13Cited by
6References
13Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 26, 2006
Grant dateAug 5, 2008
Priority date
Expiry dateNov 30, 2026

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH03K2217/0027
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

There are provided a switching power supply device performing a stable operation with fast response, a semiconductor integrated circuit device, and a power supply device.A capacitor is provided between the output side of an inductor and a ground potential. A first power MOSFET supplies an electric current from an input voltage to the input side of the inductor. A second power MOSFET turned on when the first power MOSFET is off allows the input side of the inductor to be of a predetermined potential. A first feedback signal corresponding to an output voltage obtained from the output side of the inductor and a second feedback signal corresponding to an electric current flowed to the first power MOSFET are used to form a PWM signal. The first power MOSFET has plural cells of a vertical type MOS-construction. The number of cells is 1/N. A detection MOSFET in which the gains and the drains are shared over the same semiconductor substrate with the first power MOSFET is provided to form a second feedback signal.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.