Substrate processing method
US7410543B2 · kind B2 · utility
1Cited by
19References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2004 |
| Grant date | Aug 12, 2008 |
| Priority date | — |
| Expiry date | Oct 1, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S134/902
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Resists can be removed while metal contamination of wafers, etc. and generation of particles, and growth of oxide films are suppressed. A substrate processing method comprises feeding a processing gas, such as ozone gas, into a processing vessel to pressurize an atmosphere surrounding a substrate. A solvent gas, such as steam, is fed into the processing vessel while the processing gas is fed into the processing vessel, whereby a resist of the substrate can be removed with the solvent gas and the processing gas while metal corrosion, etc. can be prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.