Chemical vapor deposition method
US7410676B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 14, 2005 |
| Grant date | Aug 12, 2008 |
| Priority date | — |
| Expiry date | Jun 25, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/515
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A chemical vapor deposition method comprises steps of: a) injecting a source gas into a chamber so that the source gas is adsorbed on a substrate; b) injecting a purge gas into the chamber for a predetermined period of time so that the source gas remaining in the chamber is purged; c) injecting a reactant gas into a plasma generating portion, and generating plasma at the plasma generating portion by applying a first-level RF power source to a RF electrode plate so that radical of the reactant gas is adsorbed on the substrate; d) injecting a purge gas into the chamber for a predetermined period of time so that the reactant gas remaining in the chamber is purged; and e) applying a second-level RF power source to the plasma generating portion at the step a), b) and d) while the steps a) to d) are being repeated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.