Method of creating a predefined internal pressure within a cavity of a semiconductor device

US7410828B2 · kind B2 · utility

Assignee

• Fraunhofer-Gesellschaft zur förderung der angewandten Forschung e.V. · DE

Inventors

• Hans-Joachim Quenzer · Berlin, DE
• Peter Merz · Hanerau-Hademarschen, DE
• Marten Oldsen · Kleve, DE
• Wolfgang Reinert · Neumünster, DE

Key dates

• Filing date: Jul 12, 2007
• Grant date: Aug 12, 2008
• Expiry date: Jul 12, 2027

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B81C2203/019
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method of creating a predefined internal pressure within a cavity of a semiconductor device, the method including providing the semiconductor device, the semiconductor device including a semiconductor oxide area which is continuously arranged between the cavity of the semiconductor device and an external surface of the semiconductor device, exposing the semiconductor device to an ambient atmosphere with a noble gas at a first temperature for a predetermined time period, and setting a second temperature, which is different from the first, after the predetermined time period has expired, the semiconductor oxide area exhibiting a higher permeability for the noble gas at the first temperature than at the second temperature.