Formation of doped regions and/or ultra-shallow junctions in semiconductor materials by gas-cluster ion irradiation
US7410890B2 · kind B2 · utility
15Cited by
6References
52Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 11, 2005 |
| Grant date | Aug 12, 2008 |
| Priority date | — |
| Expiry date | Mar 2, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0812
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method of forming one or more doped regions in a semiconductor substrate and semiconductor junctions formed thereby, using gas cluster ion beams.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.