Method of removing ion implanted photoresist
US7410909B2 · kind B2 · utility
1Cited by
7References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2006 |
| Grant date | Aug 12, 2008 |
| Priority date | — |
| Expiry date | Feb 15, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/428
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of removing an ion implanted photoresist comprises performing first cleaning a semiconductor substrate having the ion implanted photoresist using hot deionized water to which a megasonic process is applied, first rinsing the semiconductor substrate using cold deionized water, drying the semiconductor substrate, removing the ion implanted photoresist, and second cleaning the semiconductor wafer using an SPM solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.