SiC material, semiconductor device fabricating system and SiC material forming method
US7410923B2 · kind B2 · utility
1Cited by
13References
17Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 17, 2005 |
| Grant date | Aug 12, 2008 |
| Priority date | — |
| Expiry date | Feb 28, 2026 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/325
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A highly corrosion-resistant SiC material is formed on a base body by a CVD process. The SiC material contains β-SiC crystals so oriented that the ratio of the sum of peak intensities of x-ray diffraction for (220) and (311) planes of the β-Sic csystals to the sum of peak intensities of x-ray diffraction for (111), (200), (220), (311) and (222) planes Of the β-SiC crystals is 0.15 or above. The SiC material may contain both β-SiC crystals and α-SiC crystals of 6H structure. A base body with a SiC material by a CVD process is used as an internal component member of a semiconductor device fabricating system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.