Phase-change memory device having a barrier layer and manufacturing method
US7411208B2 · kind B2 · utility
14Cited by
19References
44Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2004 |
| Grant date | Aug 12, 2008 |
| Priority date | — |
| Expiry date | Apr 14, 2025 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A phase-change memory device has an oxidation barrier layer to protect against memory cell contamination or oxidation and a method of manufacturing the same. In one embodiment, a semiconductor memory device comprises a molding layer overlying a semiconductor substrate. The molding layer has a protrusion portion vertically extending from a top surface thereof. The device further includes a phase-changeable material pattern adjacent the protrusion portion and a lower electrode electrically connected to the phase-changeable material pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.