Magnetic memory device
US7411263B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 27, 2006 |
| Grant date | Aug 12, 2008 |
| Priority date | — |
| Expiry date | Aug 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/10
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A magnetic memory device includes a magnetoresistive element and a first wiring layer. The magnetoresistive element includes a fixed layer, a recording layer, and a non-magnetic layer interposed therebetween. The first wiring layer extends in a first direction and generates a magnetic field for recording data in the magnetoresistive element. The recording layer includes a base portion extending in a second direction rotated from the first direction by an angle falling within a range of more than 0° to not more than 20°, and first and second projections projecting from the first and second sides of the base portion in a third direction perpendicular to the second direction. The third and fourth sides of the base portion are inclined with respect to the third direction in the same rotational direction as a rotational direction in which the second direction is rotated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.