Programmable fuse/non-volatile memory structures using externally heated phase change material
US7411818B1 · kind B1 · utility
38Cited by
5References
5Claims
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Assignee
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Key dates
| Filing date | Feb 7, 2007 |
| Grant date | Aug 12, 2008 |
| Priority date | — |
| Expiry date | Feb 7, 2027 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2013/008
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.