Deok-kee Kim
73Patents
11h-index
98Co-inventors
77Inventor score
Filing activity: Jun 29, 2001 → Nov 1, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7353188B2 | Product selling system and method for operating the same | Physics | 52 | Expired |
| US7411818B1 | Programmable fuse/non-volatile memory structures using externally heated phase change material | Physics | 38 | Active |
| US6884715B1 | Method for forming a self-aligned contact with a silicide or damascene conductor and the structure formed thereby | Electricity | 30 | Expired |
| US7714326B2 | Electrical antifuse with integrated sensor | Electricity | 23 | Active |
| US7193262B2 | Low-cost deep trench decoupling capacitor device and process of manufacture | Electricity | 20 | Expired |
| US8299570B2 | Efuse containing sige stack | Electricity | 20 | Active |
| US7633079B2 | Programmable fuse/non-volatile memory structures in BEOL regions using externally heated phase change material | Electricity | 20 | Active |
| US7432755B1 | Programming current stabilized electrical fuse programming circuit and method | Physics | 14 | Active |
| US7195972B2 | Trench capacitor DRAM cell using buried oxide as array top oxide | Electricity | 14 | Expired |
| US7750335B2 | Phase change material structure and related method | Physics | 13 | Active |
| US8159040B2 | Metal gate integration structure and method including metal fuse, anti-fuse and/or resistor | Electricity | 13 | Active |
| US7723820B2 | Transistor based antifuse with integrated heating element | Electricity | 10 | Active |
| US6787838B1 | Trench capacitor DRAM cell using buried oxide as array top oxide | Electricity | 9 | Expired |
| US7153737B2 | Self-aligned, silicided, trench-based, DRAM/EDRAM processes with improved retention | Electricity | 9 | Expired |
| US7960809B2 | eFuse with partial SiGe layer and design structure therefor | Electricity | 8 | Active |
| US8004059B2 | eFuse containing SiGe stack | Electricity | 7 | Active |
| US7777297B2 | Non-planar fuse structure including angular bend | Electricity | 7 | Active |
| US7785937B2 | Electrical fuse having sublithographic cavities thereupon | Emerging Cross-Sectional Technologies | 6 | Active |
| US7732893B2 | Electrical fuse structure for higher post-programming resistance | Electricity | 6 | Active |
| US7851885B2 | Methods and systems involving electrically programmable fuses | Electricity | 6 | Active |
| US7521763B2 | Dual stress STI | Emerging Cross-Sectional Technologies | 6 | Active |
| US8349665B2 | Fuse devices and methods of operating the same | Physics | 5 | Active |
| US7479689B2 | Electronically programmable fuse having anode and link surrounded by low dielectric constant material | Electricity | 5 | Active |
| US7729164B2 | Non-volatile memory device, method of operating the same, and method of fabricating the same | Electricity | 5 | Active |
| US8574975B2 | Semiconductor devices having e-fuse structures and methods of fabricating the same | Electricity | 5 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.