Patent · US Active

Semiconductor device

US7411851B2 · kind B2 · utility

6Cited by
3References
7Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJan 18, 2006
Grant dateAug 12, 2008
Priority date
Expiry dateJul 28, 2026

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C29/027
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A fuse peripheral circuit shown in FIG. 2 has a fuse 10, a potential difference imparting circuit 20, a potential difference reducing circuit 30, a terminal 40, a memory circuit 50, a transfer gate 60, and a logic gate 70. The potential difference imparting circuit 20 is configured as having a transfer gate 22 (first transfer gate), a terminal 24 (first terminal) and a terminal 26, so as to give a predetermined potential difference between both ends of the fuse 10 when disconnection of the fuse 10 is judged. The potential difference reducing circuit 30 is configured as having a transfer gate 32 (second transfer gate), a terminal 34 (second terminal) and a terminal 36, and reduces the potential difference between both ends of the fuse 10 applied by the above-described potential difference imparting circuit 20.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.