Method of manufacturing semiconductor device having recess gate structure with varying recess width for increased channel length
US7413969B2 · kind B2 · utility
5Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2005 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Jan 24, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/027
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A varying-width recess gate structure having a varying-width recess formed in a semiconductor device can sufficiently increase the channel length of the transistor having a gate formed in the varying-width recess, thereby effectively reducing the current leakage and improving the refresh characteristics. In the method of manufacturing the recess gate structure, etching is performed twice or more, so as to form a gate recess having varying width in the substrate, and a gate is formed in the gate recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.