Method of manufacturing semiconductor device suitable for forming wiring using damascene method
US7413977B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2005 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Jul 6, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A concave portion is formed in an interlayer insulating film formed on a semiconductor substrate. Then a first film of Mn is formed by CVD, the first film covering the inner surface of the concave portion and the upper surface of the insulating film. Then conductive material essentially consisting of Cu is deposited on the first film to embed the conductive material in the concave portion. Then the semiconductor substrate is annealed. During the period until a barrier layer is formed having also a function of improving tight adhesion, it is possible to ensure sufficient tight adhesion of wiring members and prevent peel-off of the wiring members.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.