Semiconductor device with improved contact fuse
US7413980B2 · kind B2 · utility
1Cited by
4References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 25, 2006 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Aug 24, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/40
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One aspect of the invention provides an integrated circuit (IC). The IC comprises transistors and contact fuses. The contact fuses each comprise a conducting layer, a frustum-shaped contact has a narrower end that contacts the conducting layer and a first metal layer that is located over the conducting layer. A wider end of the frustum-shaped contact contacts the first metal layer. The frustum-shaped contact has a ratio of an opening of the wider end to the narrower end that is at least about 1.2. The contact fuses each further include a heat sink that is located over and contacts the first metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.