Pixel circuit with surface doped region between multiple transfer transistors and image sensor including the same
US7414233B2 · kind B2 · utility
13Cited by
1References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 19, 2006 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Jun 19, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/771
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel circuit of an image sensor includes a photo-converting unit such as a photo-diode for generating charge from incident light. The pixel circuit also includes a charge storing capacitor for storing the charge generated by the photo-converting unit. The pixel circuit further includes a floating diffusion node that receives the charge from the charge storing unit after being reset. Thus, an image signal VSIG is generated after a reset signal VRES is generated from the pixel circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.