Magnetoresistive effect element and magnetic memory
US7414880B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2006 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Jul 30, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/00
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive effect element includes a nonmagnetic layer having mutually facing first and second surfaces. A reference layer is provided on the first surface and has a fixed magnetization direction. A magnetization variable layer is provided on the second surface, has variable magnetization direction, and has a planer shape including a rectangular part, a first projected part, and a second projected part. The rectangular part has mutually facing first and second longer sides and mutually facing first and second shorter sides. The first projected part projects from the first longer side at a position shifted from the center toward the first shorter side. The second projected part projects from the second longer side at a position shifted from the center toward the second shorter side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.