Ultra-high-Q surface-tension-induced monolithically integrated on-chip resonator and associated devices
US7415058B2 · kind B2 · utility
1Cited by
3References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2006 |
| Grant date | Aug 19, 2008 |
| Priority date | — |
| Expiry date | Oct 5, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/1032
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A resonator structure includes a substrate and a cladding layer formed on the substrate. A plurality of lens-shaped optical structures is formed on the cladding layer. The lens-shaped optical structures comprise chacolgenide glass being exposed to a reflow process so as to make smooth the surface of the resonator structure and increase substantially its Q factor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.