Method of forming a layer of silicon carbide on a silicon wafer
US7416606B2 · kind B2 · utility
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1References
6Claims
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Assignee
Inventor
Key dates
| Filing date | May 5, 2004 |
| Grant date | Aug 26, 2008 |
| Priority date | — |
| Expiry date | May 5, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02658
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a method of forming a layer of silicon carbide on a silicone wafer. The method includes the following steps: depositing an anti-carburation mask on the wafer using an essentially-check pattern; performing a carburation step under conditions such that the residual stress takes the form of extension and compression respectively; removing the mask; and form of extension and compression respectively; removing the mask; and performing a carburation step under conditions such that the residual stress takes form of compression and extension respectively.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.