Etching solution for multiple layer of copper and molybdenum and etching method using the same
US7416681B2 · kind B2 · utility
15Cited by
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18Claims
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Key dates
| Filing date | Dec 11, 2003 |
| Grant date | Aug 26, 2008 |
| Priority date | — |
| Expiry date | Jul 24, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An etching solution for a multiple layer of copper and molybdenum includes: about 5% to about 30% by weight of a hydrogen peroxide; about 0.5% to about 5% by weight of an organic acid; about 0.2% to about 5% by weight of a phosphate; about 0.2% to about 5% by weight of a first additive having nitrogen; about 0.2% to about 5% by weight of a second additive having nitrogen; about 0.01% to about 1.0% by weight of a fluoric compound; and de-ionized water making a total amount of the etching solution 100% by weight.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.