Method for producing a dielectric interlayer and storage capacitor with such a dielectric interlayer

US7416952B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Bernd Hintze · Rohrbach, DE
• Henry Bernhardt · Dresden, DE
• Frank Bernhardt · Eppelheim, DE

Key dates

• Filing date: May 23, 2006
• Grant date: Aug 26, 2008
• Expiry date: Dec 8, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/665

Abstract

A dielectric interlayer, especially for a storage capacitor, is formed from a layer sequence subjected to a temperature process, wherein the layer sequence has at least a first metal oxide layer and a second metal oxide layer formed by completely oxidizing a metal nitride layer to higher valency.