Patent · US Expired

MOSFET having a JFET embedded as a body diode

US7417266B1 · kind B1 · utility

25Cited by
6References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 10, 2005
Grant dateAug 26, 2008
Priority date
Expiry dateJun 23, 2025

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D84/811

Abstract

A field effect transistor, in accordance with one embodiment, includes a metal-oxide-semiconductor field effect transistor (MOSFET) having a junction field effect transistor (JFET) embedded as a body diode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.