Film or layer of semiconducting material, and process for producing the film or layer

US7417297B2 · kind B2 · utility

Assignee

• Siltronic AG · DE

Inventors

• Brian Murphy · Pfarrkirchen, DE
• Reinhold Wahlich · Burghausen, DE
• Rudiger Schmolke · Burghausen, DE
• Wilfried von Ammon · Burghausen, DE
• James Moreland · Portland, US

Key dates

• Filing date: Mar 20, 2006
• Grant date: Aug 26, 2008
• Expiry date: Jun 27, 2026

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76251
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

SOI wafers are manufactured to have very thin device layers of high surface quality. The layer is ≦20 nm in thickness, has an HF density of ≦0.1/cm2, and a surface roughness of 0.2 nm RMS.