Lag cancellation in CMOS image sensors
US7417677B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2003 |
| Grant date | Aug 26, 2008 |
| Priority date | — |
| Expiry date | Feb 14, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/76
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel cell with improved lag characteristics without increased noise. The pixel cell according to embodiments of the invention includes a photo-conversion device and a floating diffusion region switchably coupled to the photo-conversion device. The pixel cell includes a reset transistor, which has a first terminal electrically connected to the floating diffusion region and a second terminal switchably coupled to first and second voltage sources. The first voltage source is higher than the second voltage source. The pixel cell operates by returning a potential on the photo-conversion device to a value approximately equal to a value of a potential barrier between the photo-conversion device and the floating diffusion region prior to generating charge in the photo-conversion device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.