Fabrication of semiconductor structure in which complementary field-effect transistors each have hypoabrupt body dopant distribution below at least one source/drain zone
US7419863B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 29, 2005 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | Jun 7, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/201
Abstract
Complementary IGFETs (210W and 220W or 530 and 540) are fabricated so that the body dopant concentration in each IGFET decreases by at least 10 in moving from a subsurface location in the body material of that IGFET up to one of its source/drain zones. Semiconductor dopant, typically a fast-diffusing species such as aluminum, is introduced into starting semiconductor material to form a relatively uniformly doped region that serves as body material (108) for one of the IGFETs. A remaining part of the starting material serves as body material (268) for the other IGFET. Well dopant is introduced into the body material of each IGFET for establishing the requisite body dopant profile. Alternatively, a cavity is formed through an initial structure having body material (108) doped in the preceding way for one of the IGFETs. Semiconductor material is introduced into the cavity to form the body material (568) for the other IGFET.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.