Method for forming barrier film and method for forming electrode film
US7419904B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jul 31, 2006 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | Jul 31, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76873
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In the present invention, a barrier film 20 is formed by forming a tungsten nitride film 21 and subsequently by forming a tungsten silicide film 22. The tungsten silicide film 22 is exposed at the surface of the barrier film 20, and an electrode film 25′ is formed so as to be brought into close contact with the tungsten silicide film 22. Since a conductive material constituting the electrode film 25′ is chemically bound to silicon atoms in the tungsten silicide film 22, the adhesion between the barrier film 20 and the electrode film 25′ is high, and the electrode film 25′ resists peeling from the barrier film 20. Further, agglomeration is not likely to occur in the electrode film 25′ during annealing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.