Semiconductor device having a metal gate electrode
US7420254B2 · kind B2 · utility
2Cited by
21References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 2005 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | Feb 3, 2026 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for making a semiconductor device is described. That method comprises forming a dielectric layer on a substrate, and forming an impurity containing metal layer on the dielectric layer. A metal gate electrode is then formed from the impurity containing metal layer. Also described is a semiconductor device that comprises a metal gate electrode that is formed on a dielectric layer, which is formed on a substrate. The metal gate electrode includes a sufficient amount of an impurity to shift the workfunction of the metal gate electrode by at least about 0.1 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.