Method and apparatus for measuring surface carrier recombination velocity and surface Fermi level
US7420684B2 · kind B2 · utility
4Cited by
3References
4Claims
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Key dates
| Filing date | Oct 24, 2005 |
| Grant date | Sep 2, 2008 |
| Priority date | — |
| Expiry date | Apr 26, 2026 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/636
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A pump beam irradiates the surface of a semiconductor sample through modulator while irradiating the surface with a probe beam so that a detector measures a light-modulated spectrum of the probe beam reflected from the surface of the semiconductor sample. Then, surface electric field strength is calculated from the period of Franz-Keldysh oscillations appearing in the light-modulated spectrum, and the surface recombination velocity and surface Fermi level are calculated based on a relation between the surface electric field strength and the probe beam power density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.